In-situ sample rotation as a tool to understand chemical vapor deposition growth of long aligned carbon nanotubes.

نویسندگان

  • Mario Hofmann
  • Daniel Nezich
  • Alfonso Reina
  • Jing Kong
چکیده

A new tool for studying the process of carbon nanotube chemical vapor deposition (CVD) synthesis is described. By rotating the substrate in situ during the CVD process, the orientation of floating nanotubes with respect to the substrate is changed by interaction with the gas stream. Nanotubes lying on the surface of the substrate, however, will maintain their relative orientation. As a result different nanotube alignment angles are observed. By defining a time window through multiple rotation steps it is possible to study carbon nanotube behavior during CVD growth in a time-resolved manner. As an example, the settling process (i.e., the sinking of the nanotube to the substrate) is investigated. The analysis of forces acting on a floating nanotube shows that a vertical gas stream due to thermal buoyancy over the sample can keep long nanotubes floating for extended times. A stochastic process, indicated by a constant settling rate over time, forces the nanotube to make contact with the substrate, and this process is attributed to flow induced instability. Additional information on the floating and settling process are revealed from our study. The settling velocity could be inferred from curved nanotubes. The clearance between a floating nanotube and the substrate was found to be several hunded micrometers.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Optimized Conditions for Catalytic Chemical Vapor Deposition of Vertically Aligned Carbon Nanotubes

Here, we have synthesized vertically aligned carbon nanotubes (VA-CNTs), using chemical vapor deposition (CVD) method. Cobalt and ethanol are used as the catalyst and the carbon source, respectively. The effects of ethanol flow rate, thickness of Co catalyst film, and growth time on the properties of the carbon nanotube growth are investigated. The results show that the flow rate of ethanol and...

متن کامل

Functionalized Carbon Nanotubes Produced by APCVD using Camphor

A simple chemical vapor deposition technique at atmospheric pressure (APCVD) is adopted to synthesize the aligned arrays of functionalized multi-walled carbon nanotubes (AMWCNTs) without using any carrier gas, at 230◦C, 750◦C and 850 ◦C. Camphor (C10H16O) is used as carbon source because this botanical hydrocarbon is chip and abundant which convert the CVD technique to a green method for produc...

متن کامل

Evaluation of the Effect of Ni-Co NPs for the Effective Growth of Carbon Nanotubes by TCVD System

A systematic study was conducted to understand the influences of catalyst combination as Ni-Co NPs on carbon nanotubes (CNTs) grown by Chemical Vapor Deposition (TCVD). The DC-sputtering system was used to prepare Co and Ni-Co thin films on silicon substrate. Ni- Co nanoparticles were used as metal catalyst for growing carbon nanotubes from acetylene (C2H2) gas in 850 ̊ C during 15 min. Carb...

متن کامل

The Impact of Cadmium Loading In Fe/Alumina Catalysts and Synthesis Temperature on Carbon Nanotubes Growth by Chemical Vapor Deposition Method

We evaluated the effect of Fe/Alumina Catalyst contained different Cadmium contents and two synthesis temperatures on producing carbon nanotubes by chemical vapor deposition of methane as a feedstock.  X-ray powder diffraction (XRD), N2 adsorption-desorption, scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy and Thermogravimetry analysis (TGA) were u...

متن کامل

Growth of carbon nanostructures upon stainless steel and brass by thermal chemical vapor deposition method

The lack of complete understanding of the substrate effects on carbon nanotubes (CNTs) growth poses a lot oftechnical challenges. Here, we report the direct growth of nanostructures such as the CNTs on stainless steel 304and brass substrates using thermal chemical vapor deposition (TCVD) process with C2H2 gas as carbon sourceand hydrogen as supporting gas mixed in Ar gas flow. We used an especi...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Nano letters

دوره 8 12  شماره 

صفحات  -

تاریخ انتشار 2008